دیتاشیت FDN339AN
مشخصات دیتاشیت
| نام دیتاشیت |
FDN339AN
|
| حجم فایل |
191.505
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
5
|
مشخصات
-
RoHS:
true
-
Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
onsemi FDN339AN
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
500mW
-
Total Gate Charge (Qg@Vgs):
10nC@4.5V
-
Drain Source Voltage (Vdss):
20V
-
Input Capacitance (Ciss@Vds):
700pF@10V
-
Continuous Drain Current (Id):
3A
-
Gate Threshold Voltage (Vgs(th)@Id):
1.5V@250uA
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
35mΩ@4.5V,3A
-
Package:
SuperSOT-3
-
Manufacturer:
onsemi
-
Series:
PowerTrench®
-
Packaging:
Cut Tape (CT)
-
Part Status:
Active
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
20V
-
Current - Continuous Drain (Id) @ 25°C:
3A (Ta)
-
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
-
Rds On (Max) @ Id, Vgs:
35mOhm @ 3A, 4.5V
-
Vgs(th) (Max) @ Id:
1.5V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
10nC @ 4.5V
-
Vgs (Max):
±8V
-
Input Capacitance (Ciss) (Max) @ Vds:
700pF @ 10V
-
FET Feature:
-
-
Power Dissipation (Max):
500mW (Ta)
-
Mounting Type:
Surface Mount
-
Supplier Device Package:
SuperSOT-3
-
Package / Case:
TO-236-3, SC-59, SOT-23-3
-
Base Part Number:
FDN339
-
detail:
N-Channel 20V 3A (Ta) 500mW (Ta) Surface Mount SuperSOT-3
