دیتاشیت FDN339AN
مشخصات دیتاشیت
نام دیتاشیت |
FDN339AN
|
حجم فایل |
191.505
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
5
|
مشخصات
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RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi FDN339AN
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
500mW
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Total Gate Charge (Qg@Vgs):
10nC@4.5V
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Drain Source Voltage (Vdss):
20V
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Input Capacitance (Ciss@Vds):
700pF@10V
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Continuous Drain Current (Id):
3A
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Gate Threshold Voltage (Vgs(th)@Id):
1.5V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
35mΩ@4.5V,3A
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Package:
SuperSOT-3
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Manufacturer:
onsemi
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Series:
PowerTrench®
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
20V
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Current - Continuous Drain (Id) @ 25°C:
3A (Ta)
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Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
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Rds On (Max) @ Id, Vgs:
35mOhm @ 3A, 4.5V
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Vgs(th) (Max) @ Id:
1.5V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
10nC @ 4.5V
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Vgs (Max):
±8V
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Input Capacitance (Ciss) (Max) @ Vds:
700pF @ 10V
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FET Feature:
-
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Power Dissipation (Max):
500mW (Ta)
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Mounting Type:
Surface Mount
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Supplier Device Package:
SuperSOT-3
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Package / Case:
TO-236-3, SC-59, SOT-23-3
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Base Part Number:
FDN339
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detail:
N-Channel 20V 3A (Ta) 500mW (Ta) Surface Mount SuperSOT-3